3CD010G datasheet(1/2 Pages) ISC

部件名	3CD010G

功能描述	isc Silicon PNP Power Transistor

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制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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isc Silicon PNP Power Transistor

3CD010G

DESCRIPTION

·

DC Current Gain

: hFE= 15@IC = -0.75A

·

Collector-Emitter Sustaining Voltage

: VCEO(SUS)= -200V(Min)

·

Minimum Lot-to-Lot variations for robust device

performance and reliable operation

APPLICATIONS

·

Designed for use in general purpose power amplifier and

switching applications.

ABSOLUTE MAXIMUM RATINGS (Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-200

V

VCEO

Collector-Emitter Voltage

-200

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current -Continuous

-1.5

A

PC

Collector Power Dissipation

@ TC=25℃

10

W

Tj

Junction Temperature

175

℃

Tstg

Storage Temperature

-55~175

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

1.5

℃

/W

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3CD010G 数据表(PDF) 1 Page - Inchange Semiconductor Company Limited

3CD010G 数据表(HTML) 1 Page - Inchange Semiconductor Company Limited

类似零件编号 - 3CD010G

类似说明 - 3CD010G

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3CD010G 数据表(PDF) 1 Page - Inchange Semiconductor Company Limited

3CD010G 数据表(HTML) 1 Page - Inchange Semiconductor Company Limited

类似零件编号 - 3CD010G

类似说明 - 3CD010G

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数据表下载