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STK850 数据表(PDF) 3 Page - STMicroelectronics

部件名 STK850
功能描述  N-CHANNEL 30V - 0.0024 廓 - 30A - PolarPAK-TM STripFET??Power MOSFET
PDF  12 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STK850 数据表(HTML) 3 Page - STMicroelectronics

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STK850
Electrical characteristics
3/12
2
Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 3.
On/off states
Table 4.
Dynamic
Table 5.
Switching times
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-Source Breakdown
Voltage
ID = 250µA, VGS= 0
30
V
IDSS
Zero Gate Voltage Drain
Current (VGS = 0)
VDS = Max Rating,
VDS = Max Rating,Tc=125°C
1
10
µA
µA
IGSS
Gate Body Leakage Current
(VDS = 0)
VGS = ±16V
±
100
nA
VGS(th)
Gate Threshold Voltage
VDS= VGS, ID = 250µA
12.5
V
RDS(on)
Static Drain-Source On
Resistance
VGS= 10V, ID= 15A
VGS= 4.5V, ID= 15A
0.0024
0.0029
0.0029
0.0035
Ω
Ω
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs Note 5
Forward Transconductance
VDS =10V, ID = 15A
48
S
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS =25V, f=1 MHz, VGS=0
3150
940
90
pF
pF
pF
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD=15V, ID = 30A
VGS =4.5V
(see Figure 14)
24.5
8
8.2
32.5
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Delay Time
Rise Time
VDD= 15V, ID= 15A,
RG=4.7Ω, VGS=4.5V
(see Figure 15)
20
57
ns
ns
td(off)
tf
Turn-off Delay Time
Fall Time
VDD=15V, ID= 15A,
RG=4.7Ω, VGS=4.5V
(see Figure 15)
31
13
ns
ns



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