TN2510 datasheet(3/14 Pages) MICROCHIP

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2020 Microchip Technology Inc.

DS20005950A-page 3

TN2510

AC ELECTRICAL CHARACTERISTICS

Electrical Specifications: TA = 25°C unless otherwise specified. All AC parameters are not 100% sample tested.

Parameter

Sym. Min. Typ. Max. Unit

Conditions

Forward Transconductance

GFS 400 800

— mmho VDS = 25V, ID = 1A

Input Capacitance

CISS

—

125

VGS = 0V,

VDS = 25V,

f = 1 MHz

Common-Source Output Capacitance

COSS —

Reverse Transfer Capacitance

CRSS —

Turn-On Delay Time

td(ON) —

—

VDD = 25V,

ID = 1.5A,

RGEN = 25Ω

Rise Time

—

Turn-Off Delay Time

td(OFF) —

—

Fall Time

—

DIODE PARAMETER

Diode Forward Voltage Drop

VSD

—

1.8

VGS = 0V, ISD = 1.5A (Note 1)

Reverse Recovery Time

trr

—

300

—

VGS = 0V, ISD = 1.5A

Note 1: All DC parameters are 100% tested at 25°C unless otherwise stated.

Pulse test: 300 µs pulse, 2% duty cycle

TEMPERATURE SPECIFICATIONS

Parameter

Sym. Min. Typ. Max. Unit

Conditions

TEMPERATURE RANGE

Operating Ambient Temperature

–55

—

+150

°C

Storage Temperature

–55

—

+150

°C

PACKAGE THERMAL RESISTANCE

3-lead SOT-89

JA

—

°C/W

THERMAL CHARACTERISTICS

Package

ID (Note 1)

(Continuous)

(mA)

(Pulsed)

(A)

Power Dissipation

at TA = 25°C

(Note 2)

(W)

IDR (Note 1)

(mA)

IDRM

(A)

3-lead SOT-89

730

1.6

730

Note 1: ID (continuous) is limited by maximum rated TJ.

2: TA = 25°C. Mounted on an FR5 Board, 25 mm x 25 mm x 1.57 mm.

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