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MXC62320MB 数据表(PDF) 2 Page - MEMSIC Semiconductor (Tianjin) Co., Ltd. |
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MXC62320MB 数据表(HTML) 2 Page - MEMSIC Semiconductor (Tianjin) Co., Ltd. |
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2 / 8 page ![]() MEMSIC MXC6232xG/H/M/N Rev.A Page 2 of 8 4/11/2010 ELECTRICAL CHARACTERISTICS (Measurements @ 25°C, Acceleration = 0 g unless otherwise noted; VDD = 3.0V unless otherwise specified) Parameter Conditions Min Typ Max Units Measurement Range1 Each Axis ±2.0 G Nonlinearity Best fit straight line 0.5 1.0 % of FS Alignment Error2 ±1.0 degrees Transverse Sensitivity3 ±2.0 % 486 512 538 counts/g Sensitivity MXC6232xG/M MXC6232xH/N 118 128 138 counts/g Sensitivity Change Over Temperature Δ from 25°C MXC6232xG/H MXC6232xM/N -10 -15 +8 +10 % % Zero g Offset Bias Level MXC6232xG/M MXC6232xH/N 1996 492 2048 512 2100 532 counts counts Zero g Offset TC Δ from 25°C 0.8 mg/ °C Tout MXC6232xG/M MXC6232xH/N 2550 635 2710 675 2870 715 counts counts Tout Sensitivity MXC6232xG/M MXC6232xH/N 2.00 0.48 2.33 0.58 2.60 0.68 counts/ °C counts/ °C Noise Density, RMS within 20Hz 0.7 1.0 mg/ Hz Resolution @ 1Hz. BW 0.5 1.0 mg Frequency Response @ -3dB 15 17 19 Hz Self-test 1.7 2.2 2.7 G Output Drive Capability @ 2.7 V – 3.6 V 100 μA Turn-On Time4 75 100 mS Operating Voltage Range 2.7 3.0 3.6 V Supply Current 1.8 2.5 mA Power Down Current 1.0 μA Operating Temperature Range MXC6232xG/H MXC6232xM/N 0 -40 +70 +85 °C °C NOTES: 1 Guaranteed by measurement of initial offset and sensitivity 2 Alignment error is specified as the angle between the true and indicated axis of sensitivity 3 Cross axis sensitivity is the algebraic sum of the alignment and the inherent sensitivity errors 4 Output settled to within ± 17mg |
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