MJD112 datasheet(1/1 Pages) TGS

部件名	MJD112

功能描述	COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

PDF	1 Pages

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制造商	TGS [Tiger Electronic Co.,Ltd]

网页	http://www.tgselec.com

标志

1 / 1 page

Parameter

Symbol

Value

Unit

Collector-Base Voltage

V

CBO

100

V

Collector-Emitter Voltage

V

CEO

100

V

Emitter-Base Voltage

V

EBO

5.0

V

Collector Current Peak

I C

4.0

A

Base Current

I

B

50

mA

Total Dissipation at

P

tot

20

W

Max. Operating Junction Temperature

T

j

150

oC

Storage Temperature

T

stg

-55~150

oC

MJD112

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Collector Cut-off Current

I

CEO

V

CE = 100V, IB = 0

—

0.5

mA

Collector Cut-off Current

I

CBO

V

CB = 100V, IE = 0

—

0.2

mA

Emitter Cut-off Current

I

EBO

V

EB = 5.0V, IC = 0

—

2.0

mA

Collector-Emitter Sustaining Voltage

V

CEO

I

C = 30mA, IB = 0

100

—

V

DC Current Gain

h

FE(1)

V

CE = 3.0V, IC = 0.5A

500

—

h

FE(2)

V

CE = 3.0V, IC = 2.0A

1000

—

Collector-Emitter Saturation Voltage

V

CE(sat)

I

C = 2.0A, IB = 8mA

—

2.0

V

I

C = 4.0A, IB = 40mA

—

3.0

Base-Emitter on Voltage

V

BE(on)

V

CE = 3.0V, IC = 2.0A

—

2.8

V

Base-Emitter Saturation Voltage

V

BE(sat)

I

C = 4.0A, IB = 40mA

—

4.0

V

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

、

1

Medium Power Darlington TR

、

2

Complement to MJD117

ELECTRICAL CHARACTERISTICS

ABSOLUTE MAXIMUM RATINGS ( Ta = 25 C)

O

( Ta = 25 C)

O

Hammer Drivers,Audio Amplifiers Applications

Power Linear and Switching Applications

Product specification

TO-252

B

E

C

TIGER ELECTRONIC CO.,LTD

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