2SD1007-R datasheet(2/4 Pages) AITSEMI

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AiT Semiconductor Inc.

www.ait-ic.com

2SD1007

GENERAL PURPOSE TRANSISTORS

NPN TRANSISTORS

REV1.1

- MAR 2015 RELEASED, AUG 2020 UPDATED -

- 2 -

ABSOLUTE MAXIMUM RATINGS

TA=25°C

VCBO, Collector-Base Voltage

120V

VCEO, Collector-Emitter Voltage

120V

VEBO, Emitter-Base Voltage

IC, Collector Current

0.7A

IC(pu), Collector Current (pulse)NOTE1

1.2A

PC, Collector Power Dissipation

TJ, Junction Temperature

150°C

TSTG, Storage Temperature

-55°C ~150°C

Stresses above may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these

or any other conditions beyond those indicated in the Electrical Characteristics are not implied. Exposure to absolute maximum rating

conditions for extended periods may affect device reliability.

NOTE1: PW≤10ms, duty cycle≤50%

ELECTRICAL CHARACTERISTICS

TA=25°C

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

Base-Emitter VoltageNOTE2

VBE

VCE=10V, IC=10mA

550

620

650

Collector Cutoff Current

ICBO

VCB=120V, IE=0

100

Emitter Cutoff Current

IEBO

VEB=5V, IC=0

100

DC Current GainNOTE2

hFE

VCE=1V, IC=100mA

200

400

VCE=1V, IC=5.0mA

200

Collector- Emitter Saturation

VoltageNOTE2

VCE(sat)

IC=500mA, IB=50mA

0.3

0.6

Base-Emitter Saturation VoltageNOTE2

VBE(sat)

IC=500mA, IB=50mA

0.9

1.5

Output Capacitance

Cob

VCB=10V, IE=0, f=1.0MHz

Transition Frequency

VCE=10V, IE=-10mA

MHz

NOTE2: PW≤350μs, duty cycle≤2%

●hFE Classification

2SD1007-R

2SD1007-Q

2SD1007-P

hFE

90~180

135~270

200~400

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