IRFP450

www.vishay.com

Vishay Siliconix

S22-0058-Rev. B, 31-Jan-2022

1

Document Number: 91233

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Power MOSFET

FEATURES

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• Isolated Central Mounting Hole

• Fast Switching

• Ease of Paralleling

• Simple Drive Requirements

• Material categorization: for definitions of compliance

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized

device

design,

low

on-resistance

and

cost-effectiveness.

The TO-247 package is preferred for commercial-industrial

applications where higher power levels preclude the use of

TO-220 devices. The TO-247 is similar but superior to the

earlier TO-218 package because its isolated mounting hole.

It also provides greater creepage distances between pins to

meet the requirements of most safety specifications.

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)

d. 1.6 mm from case

PRODUCT SUMMARY

500

0.40

150

20

80

Configuration

Single

N-Channel MOSFET

G

D

S

TO-247

G

D

S

ORDERING INFORMATION

Package

TO-247

Lead (Pb)-free

IRFP450PbF

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

500

V

Gate-Source Voltage

± 20

Continuous Drain Current

14

A

8.7

56

Linear Derating Factor

1.5

W/°C

760

mJ

8.7

A

19

mJ

Maximum Power Dissipation

190

W

dV/dt

3.5

V/ns

Operating Junction and Storage Temperature Range

- 55 to + 150

°C

Soldering Recommendations (Peak Temperature)

for 10 s

Mounting Torque

6-32 or M3 screw

10

lbf · in

1.1

N · m