IRFP450APBF datasheet(1/11 Pages) VISHAY

部件名	IRFP450APBF

功能描述	Power MOSFET

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制造商	VISHAY [Vishay Siliconix]

网页	http://www.vishay.com

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IRFP450A

www.vishay.com

Vishay Siliconix

S22-0058-Rev. B, 31-Jan-2022

1

Document Number: 91230

For technical questions, contact: hvmos.techsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Power MOSFET

FEATURES

• Low Gate Charge Qg Results in Simple Drive

Requirement

• Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

• Fully

Characterized

Capacitance

and

Avalanche Voltage and Current

• Effective Coss Specified

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

APPLICATIONS

• Switch Mode Power Supply (SMPS)

• Uninterruptable Power Supply

• High Speed Power Switching

TYPICAL SMPS TOPOLOGIES

• Two Transistor Forward

• Half Bridge, Full Bridge

• PFC Boost

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)

b. Starting TJ = 25 °C, L = 7.8 mH, RG = 25

Ω, IAS = 14 A (see fig. 12)

c. ISD

≤ 14 A, dI/dt ≤ 130 A/μs, VDD ≤ VDS, TJ ≤ 150 °C

d. 1.6 mm from case

PRODUCT SUMMARY

VDS (V)

500

RDS(on) (

Ω)VGS = 10 V

0.40

Qg (Max.) (nC)

64

Qgs (nC)

16

Qgd (nC)

26

Configuration

Single

N-Channel MOSFET

G

D

S

TO-247

G

D

S

ORDERING INFORMATION

Package

TO-247

Lead (Pb)-free

IRFP450APbF

ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

VDS

500

V

Gate-Source Voltage

VGS

± 30

Continuous Drain Current

VGS at 10 V

TC = 25 °C

ID

14

A

TC = 100 °C

8.7

Pulsed Drain Currenta

IDM

56

Linear Derating Factor

1.5

W/°C

Single Pulse Avalanche Energyb

EAS

760

mJ

Repetitive Avalanche Currenta

IAR

14

A

Repetitive Avalanche Energya

EAR

19

mJ

Maximum Power Dissipation

TC = 25 °C

PD

190

W

Peak Diode Recovery dV/dtc

dV/dt

4.1

V/ns

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to + 150

°C

Soldering Recommendations (Peak Temperature)

For 10 s

300d

Mounting Torque

6-32 or M3 screw

10

lbf · in

1.1

N · m

类似零件编号 - IRFP450APBF

制造商	部件名	数据表	功能描述
International Rectifier	IRFP450APBF	194Kb / 8P	HEXFET짰Power MOSFET

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