IRFP450LC datasheet(7/11 Pages) VISHAY

7 / 11 page

IRFP450LC

www.vishay.com

Vishay Siliconix

S22-0058-Rev. B, 31-Jan-2022

Document Number: 91231

For technical questions, contact: hvmos.techsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Fig. 14 - For N-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon

Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and

reliability data, see www.vishay.com/ppg?91231.

P.W.

Period

dI/dt

Diode recovery

dV/dt

Ripple

≤ 5 %

Body diode forward drop

Re-applied

voltage

Reverse

recovery

current

Body diode forward

current

GS = 10 V

Driver gate drive

D.U.T. l

SD waveform

D.U.T. V

DS waveform

Inductor current

D =

P.W.

Period

Peak Diode Recovery dV/dt Test Circuit

• dV/dt controlled by R

• Driver same type as D.U.T.

• I

SD controlled by duty factor “D”

• D.U.T. - device under test

D.U.T.

Circuit layout considerations

• Low stray inductance

• Ground plane

• Low leakage inductance

current transformer

Note

a. V

GS = 5 V for logic level devices

IRFP450LC 数据表(PDF) 7 Page - Vishay Siliconix

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