IRFS11N50APBF datasheet(2/10 Pages) VISHAY

2 / 10 page

IRFS11N50A, SiHFS11N50A

www.vishay.com

Vishay Siliconix

S13-1927-Rev. E, 09-Sep-13

Document Number: 91286

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Pulse width

 300 μs; duty cycle  2 %.

c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising fom 0 % VDS to 80 % VDS.

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

TYP.

MAX.

UNIT

Maximum Junction-to-Case (Drain)

RthJC

-0.75

°C/W

Case-to-Sink, Flat, Greased Surface

RthCS

0.50

Maximum Junction-to-Ambient

RthJA

-62

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0, ID = 250 μA

500

VDS Temperature Coefficient

V

DS/TJ

Reference to 25 °C, ID = 1 mA

-0.060

V/°C

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 μA

2.0

4.0

Gate-Source Leakage

IGSS

VGS = ± 30 V

± 100

Zero Gate Voltage Drain Current

IDSS

VDS = 500 V, VGS = 0 V

μA

VDS = 400 V, VGS = 0 V, TJ = 125 °C

250

Drain-Source On-State Resistance

RDS(on)

VGS = 10 V

ID = 6.6 Ab

0.52



Forward Transconductance

gfs

VDS = 50 V, ID = 6.6 A

6.1

Dynamic

Input Capacitance

Ciss

VGS = 0 V,

VDS = 25 V,

f = 1.0 MHz, see fig. 5

1423

Output Capacitance

Coss

208

Reverse Transfer Capacitance

Crss

-8.1

Output Capacitance

Coss

VGS = 0 V

VDS = 1.0 V, f = 1.0 MHz

2000

VDS = 400 V, f = 1.0 MHz

Effective Output Capacitance

Coss eff.

VDS = 0 V to 400 Vc

-97

Total Gate Charge

VGS = 10 V

ID = 11 A, VDS = 400 V

see fig. 6 and 13b

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

Turn-On Delay Time

td(on)

VDD = 250 V, ID = 11 A

Rg = 9.1 , RD = 22

see fig. 10b

-14

Rise Time

-35

Turn-Off Delay Time

td(off)

-32

Fall Time

-28

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

MOSFET symbol



showing the



integral reverse



p - n junction diode

Pulsed Diode Forward Currenta

ISM

Body Diode Voltage

VSD

TJ = 25 °C, IS = 11 A, VGS = 0 Vb

1.5

Body Diode Reverse Recovery Time

trr

TJ = 25 °C, IF = 11 A, dI/dt = 100 A/μsb

510

770

Body Diode Reverse Recovery Charge

Qrr

-3.4

5.1

μC

Forward Turn-On Time

ton

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

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