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NTLJS7D2P02P8Z 数据表(PDF) 2 Page - ON Semiconductor

部件名 NTLJS7D2P02P8Z
功能描述  MOSFET - Power, Single P-Channel, WDFN6 -20 V
PDF  6 Pages
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制造商  ONSEMI [ON Semiconductor]
网页  http://www.onsemi.com
标志 ONSEMI - ON Semiconductor

NTLJS7D2P02P8Z 数据表(HTML) 2 Page - ON Semiconductor

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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = −250 mA
−20
V
Drain−to−Source Breakdown
Voltage Temperature Coefficient
V(BR)DSS/
TJ
ID = −250 mA, ref to 25°C
14.4
mV/°C
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V,
VDS = −16 V
TJ = 25°C
−1
mA
TJ = 125°C
−10
Gate−to−Source Leakage Current
IGSS
VDS = 0 V, VGS = ±8.0 V
±10
mA
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
VGS(TH)
VGS = VDS, ID = 250 mA
−0.4
−1.5
V
Threshold Temperature Coefficient
VGS/TJ
ID = −250 mA, ref to 25°C
−3.3
mV/°C
Drain−to−Source On Resistance
RDS(on)
VGS = −4.5 V, ID = −10 A
7.1
9.0
mW
VGS = −2.5 V, ID = −5 A
9.1
11
Forward Transconductance
gFS
VDS = −5 V, ID = −10 A
59
S
CHARGES AND CAPACITANCES
Input Capacitance
Ciss
VGS = 0 V, VDS = −10 V,
f = 1.0 MHz
2790
pF
Output Capacitance
Coss
412
Reverse Transfer Capacitance
Crss
369
Total Gate Charge
QG(TOT)
VGS = −4.5 V, VDS = −10 V,
ID = −10 A
26.7
nC
Threshold Gate Charge
QG(TH)
1.4
nC
Gate−to−Source Charge
QGS
3.7
Gate−to−Drain Charge
QGD
6.7
SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 5)
Turn−On Delay Time
td(on)
VGS = −4.5 V, VDD = −15 V,
ID = −10 A, RG = 6 W
9.3
ns
Rise Time
tr
25.1
Turn−Off Delay Time
td(off)
224
Fall Time
tf
130
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
VGS = 0 V,
IS = −10 A
TJ = 25°C
0.74
1.2
V
TJ = 125°C
0.65
Reverse Recovery Time
tRR
VGS = 0 V, dlS/dt = −100 A/ms,
IS = −10 A
20
ns
Reverse Recovery Charge
QRR
5.4
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
5. Switching characteristics are independent of operating junction temperatures.



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