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STB30N65DM6AG 数据表(PDF) 3 Page - STMicroelectronics |
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STB30N65DM6AG 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 15 page ![]() 2 Electrical characteristics TC = 25 °C unless otherwise specified. Table 4. On/off-state Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage VGS = 0 V, ID = 1 mA 650 V IDSS Zero gate voltage drain current VGS = 0 V, VDS = 650 V 5 µA VGS = 0 V, VDS = 650 V, TC = 125 °C(1) 200 µA IGSS Gate-body leakage current VDS = 0 V, VGS = ±25 V ±5 µA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 3.25 4.00 4.75 V RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 10 A 102 115 mΩ 1. Defined by design, not subject to production test. Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Input capacitance VDS = 100 V, f = 1 MHz, VGS = 0 V - 2000 - pF Coss Output capacitance - 130 - pF Crss Reverse transfer capacitance - 1.5 - pF Coss eq.(1) Equivalent output capacitance VDS = 0 to 520 V, VGS = 0 V - 339 - pF RG Intrinsic gate resistance f = 1 MHz, open drain - 1.6 - Ω Qg Total gate charge VDD = 520 V, ID = 28 A, VGS = 0 to 10 V (see Figure 14. Test circuit for gate charge behavior) - 46 - nC Qgs Gate-source charge - 13.5 - nC Qgd Gate-drain charge - 20 - nC 1. Coss eq. is defined as the constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VDD = 325 V, ID = 14 A, RG = 4.7 Ω, VGS = 10 V (see Figure 13. Test circuit for resistive load switching times and Figure 18. Switching time waveform) - 17 - ns tr Rise time - 3.3 - ns td(off) Turn-off delay time - 46 - ns tf Fall time - 8 - ns STB30N65DM6AG Electrical characteristics DS13770 - Rev 1 page 3/15 |
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