STM32L151CCU6 datasheet(81/136 Pages) STMICROELECTRONICS

部件名	STM32L151CCU6

功能描述	Ultra-low-power 32-bit MCU ARM®-based Cortex®-M3, 256KB Flash, 32KB SRAM, 8KB EEPROM, LCD, USB, ADC, DAC

PDF	136 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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81 / 136 page

DocID022799 Rev 13

81/136

STM32L151xC STM32L152xC

Electrical characteristics

109

Flash memory and data EEPROM

Table 36. Flash memory and data EEPROM characteristics

Symbol

Parameter

Conditions

Min

Typ

Max(1)

1. Guaranteed by design.

Unit

VDD

Operating voltage

Read / Write / Erase

-1.65

3.6

tprog

Programming/ erasing

time for byte / word /

double word / half-page

Erasing

3.28

3.94

Programming

3.28

3.94

IDD

Average current during

the whole programming /

erase operation

TA = 25 °C, VDD = 3.6 V

600

900

µA

Maximum current (peak)

during the whole

programming / erase

operation

-1.5

2.5

Table 37. Flash memory and data EEPROM endurance and retention

Symbol

Parameter

Conditions

Value

Unit

Min(1)

1. Guaranteed by characterization results.

Typ Max

NCYC(2)

Cycling (erase / write)

Program memory

TA = -40°C to

105 °C

kcycles

Cycling (erase / write)

EEPROM data memory

300

tRET(2)

2. Characterization is done according to JEDEC JESD22-A117.

Data retention (program memory) after

10 kcycles at TA = 85 °C

TRET = +85 °C

years

Data retention (EEPROM data memory)

after 300 kcycles at TA = 85 °C

Data retention (program memory) after

10 kcycles at TA = 105 °C

TRET = +105 °C

Data retention (EEPROM data memory)

after 300 kcycles at TA = 105 °C

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