STL52N60DM6 datasheet(2/14 Pages) STMICROELECTRONICS

部件名	STL52N60DM6

功能描述	N-channel 600 V, 72 mΩ typ., 45 A, MDmesh DM6 Power MOSFET in a PowerFLAT 8x8 HV package

PDF	14 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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2 / 14 page

Electrical ratings

Table 1. Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate-source voltage

±25

ID(1)

Drain current (continuous) at TC = 25 °C

Drain current (continuous) at TC = 100 °C

IDM(2)

Drain current (pulsed)

128

PTOT

Total power dissipation at TC = 25 °C

174

dv/dt(3)

Peak diode recovery voltage slope

100

V/ns

di/dt(3)

Peak diode recovery current slope

1000

A/μs

dv/dt(4)

MOSFET dv/dt ruggedness

100

V/ns

Tstg

Storage temperature range

-55 to 150

°C

Operating junction temperature range

°C

1. Referred to TO-247 package.

2. Pulse width is limited by safe operating area.

3. ISD ≤ 45 A, VDS (peak) < V(BR)DSS, VDD = 400 V

4. VDS ≤ 480 V.

Table 2. Thermal data

Symbol

Parameter

Value

Unit

RthJC

Thermal resistance, junction-to-case

0.72

°C/W

RthJB (1)

Thermal resistance, junction-to-board

°C/W

1. When mounted on FR-4 board of 1 inch², 2oz Cu.

Table 3. Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not repetitive (pulse width limited by TJ max.)

EAS

Single pulse avalanche energy (starting TJ = 25 °C, ID = IAR, VDD = 50 V)

690

STL52N60DM6

Electrical ratings

DS12975 - Rev 3

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