STPS2H100_V01 datasheet(4/19 Pages) STMICROELECTRONICS

4 / 19 page

Figure 5. Normalized avalanche power derating versus

junction temperature (Tj = 125 °C)

(tp)

(10 µs)

ARM

0.001

0.01

0.1

100

1000

t (µs)

Figure 6. Relative variation of thermal impedance junction

to ambient versus pulse duration (SMA)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

th(j-a)

t (s)

Single pulse

SMA

Figure 7. Relative variation of thermal impedance junction

to lead versus pulse duration (SMA Flat, SMA Flat Notch)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

Single pulse

SMA Flat

SMA Flat Notch

/ R

th(j-l)

0.9

1.0

t (s)

Figure 8. Relative variation of thermal impedance junction

to ambient versus pulse duration (SMB)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

th(j-a)

t (s)

Single pulse

SMB

Figure 9. Relative variation of thermal impedance junction

to lead versus pulse duration (SMB Flat)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

SMBflat

th(j-l)

t (s)

Single pulse

Figure 10. Reverse leakage current versus reverse

voltage applied (typical values)

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

1.E+04

2 0

100

Tj = 150 °C

Tj = 125 °C

Tj = 25 °C

Tj = 100 °C

Tj = 75 °C

Tj = 50 °C

V (V)

I (µA)

STPS2H100

Characteristics (curves)

DS1452 - Rev 10

page 4/19

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