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SPC582BX 数据表(PDF) 47 Page - STMicroelectronics |
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SPC582BX 数据表(HTML) 47 Page - STMicroelectronics |
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47 / 115 page ![]() DS11597 Rev 4 47/115 SPC582Bx Electrical characteristics 50 ΔVPRECH SR D Decharge voltage precision TJ <150 °C 0 0.25 V R20KΩ CC D Internal voltage reference source impedance —16 30 K Ω ΔVINTREF CC P Internal reference voltage precision Applies to all internal reference points (VSS_HV_ADR, 1/3 * VDD_HV_ADR, 2/3 * VDD_HV_ADR, VDD_HV_ADR) −0.20 0.20 V tADCSAMPLE SR P ADC sample time(1) Fast channel – 12-bit configuration 6/fADCK —µs D Fast channel – 10-bit configuration mode 1(2) (Standard frequency mode only) 6/fADCK Fast channel – 10-bit configuration mode 2(3) (Standard frequency mode only) 5/fADCK Fast channel – 10-bit configuration mode 3(4) (High frequency mode only) 6/fADCK Standard channel– 12-bit configuration 12/fADCK Standard channel– 10-bit configuration mode 1(2) (Standard frequency mode only) 12/fADCK Standard channel – 10-bit configuration mode 2(3) (Standard frequency mode only) 10/fADCK Standard channel – 10-bit configuration mode 3(4) (High frequency mode only) 12/fADCK Conversion of BIAS test channels through 20 k Ω input. 40/fADCK tADCEVAL SR P ADC evaluation time 12-bit configuration 12/fADCK — µs D 10-bit configuration 10/fADCK — Table 25. SARn ADC electrical specification (continued) Symbol C Parameter Conditions Value Unit Min Max |
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