STW70N60DM6 datasheet(4/14 Pages) STMICROELECTRONICS

部件名	STW70N60DM6

功能描述	N-channel 600 V, 36 mΩ typ., 62 A, MDmesh DM6 Power MOSFETs in TO-247 and TO-247 long leads packages

PDF	14 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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4 / 14 page

Table 7. Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain current

ISDM(1)

Source-drain current (pulsed)

220

VSD(2)

Forward on voltage

VGS = 0 V, ISD = 62 A

1.6

trr

Reverse recovery time

ISD = 62 A, di/dt = 100 A/μs,

VDD = 60 V

(see Figure 15. Test circuit for

inductive load switching and diode

recovery times)

138

Qrr

Reverse recovery charge

0.69

µC

IRRM

Reverse recovery current

trr

Reverse recovery time

ISD = 62 A, di/dt = 100 A/μs,

VDD = 60 V, TJ = 150 °C

(see Figure 15. Test circuit for

inductive load switching and diode

recovery times)

340

Qrr

Reverse recovery charge

4.6

µC

IRRM

Reverse recovery current

1. Pulse width is limited by safe operating area

2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%

STW70N60DM6, STWA70N60DM6

Electrical characteristics

DS12274 - Rev 4

page 4/14

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