STW75N60DM6 datasheet(2/14 Pages) STMICROELECTRONICS

部件名	STW75N60DM6

功能描述	N-channel 600 V, 32 mΩ typ., 72 A MDmesh DM6 Power MOSFETs in TO-247 and TO-247 long leads packages

PDF	14 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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2 / 14 page

Electrical ratings

Table 1. Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate-source voltage

±25

Drain current (continuous) at TC = 25 °C

Continuous collector current at TC = 100 °C

IDM (1)

Drain current (pulsed)

240

PTOT

Total power dissipation at TC = 25 °C

446

dv/dt(2)

Peak diode recovery voltage slope

100

V/ns

di/dt(2)

Peak diode recovery current slope

1000

A/μs

dv/dt(3)

MOSFET dv/dt ruggedness

100

V/ns

TSTG

Storage temperature range

- 55 to 150

°C

Operating junction temperature range

1. Pulse width limited by safe operating area.

2. ISD ≤ 72 A, VDS(peak) < V(BR)DSS, VDD = 400 V

3. VDS ≤ 480 V

Table 2. Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case

0.28

°C/W

Rthj-amb

Thermal resistance junction-ambient

°C/W

Table 3. Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not repetitive

(pulse width limited by Tjmax)

EAS

Single pulse avalanche energy

(starting Tj = 25 °C, ID = IAR; VDD = 50 V)

1.7

STW75N60DM6, STWA75N60DM6

Electrical ratings

DS12280 - Rev 3

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