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AF9926NSA 数据表(PDF) 2 Page - Anachip Corp

部件名 AF9926NSA
功能描述  N-Channel Enhancement Mode Power MOSFET
PDF  6 Pages
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制造商  ANACHIP [Anachip Corp]
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标志 ANACHIP - Anachip Corp

AF9926NSA 数据表(HTML) 2 Page - Anachip Corp

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AF9926N
N-Channel Enhancement Mode Power MOSFET
Anachip Corp.
www.anachip.com.tw
Rev. 1.1 Sep 5, 2005
2/6
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
20
V
VGS
Gate-Source Voltage
±12
V
TA=25ºC
6
ID
Continuous Drain Current (Note 1)
TA=70ºC
4.8
A
IDM
Pulsed Drain Current (Note 2)
26
A
Total Power Dissipation
2
W
PD
Linear Derating Factor
TA=25ºC
0.016
W/ºC
TSTG
Storage Temperature Range
-55 to 150
ºC
TJ
Operating Junction Temperature Range
-55 to 150
ºC
Thermal Data
Symbol
Parameter
Maximum
Units
Rthj-amb
Thermal Resistance Junction-ambient (Note 1)
Max.
62.5
ºC/W
Electrical Characteristics at T
J=25ºC unless otherwise specified
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
20
-
-
V
∆BVDSS /
∆TJ
Breakdown Voltage Temperature
Coefficient
Reference to 25
oC,
ID=1mA
-
0.03
-
V/
oC
VGS=4.5V, ID=6A
-
-
30
RDS(ON)
Static Drain-Source On-Resistance
(Note 3)
VGS=2.5V, ID=5.2A
45
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
-
-
1.2
V
gfs
Forward Transconductance
VDS=10V, ID=6A
-
20
-
S
Drain-Source Leakage Current
(TJ=25
oC)
VDS=20V, VGS=0V
-
-
25
IDSS
Drain-Source Leakage Current
(TJ=70
oC)
VDS=20V, VGS=0V
-
-
250
uA
Gate-Source Forward Leakage
VGS=12V
-
-
100
IGSS
Gate-Source Reverse Leakage
VGS=-12V
-
-
-100
nA
Qg
Total Gate Charge (Note 3)
-
23
35
Qgs
Gate-Source Charge
-
4.5
7
Qgd
Gate-Drain (“Miller”) Charge
ID=6A,
VDS=20V,
VGS=5V
-
7
11
nC
td(on)
Turn-On Delay Time (Note 3)
-
30
60
tr
Rise Time
-
70
140
td(off)
Turn-Off Delay Time
-
40
80
tf
Fall-Time
VDS=10V,
ID=1A,
RG=6Ω, VGS=5V
RD=10Ω
-
65
130
ns
Ciss
Input Capacitance
-
1035
-
Coss
Output Capacitance
-
320
-
Crss
Reverse Transfer Capacitance
VGS=0V,
VDS=20V,
f=1.0MHz
-
150
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current (Body Diode) VD=VG=0V, VS=1.3V
-
-
1.54
V
VSD
Forward On Voltage (Note 3)
TJ=25ºC, IS=1.7A,
VGS=0V
-
0.78
1.2
V
Note 1: Surface mounted on 1 in
2 copper pad of FR4 board, 135oC/W when mounted on Min. copper pad.
Note 2: Pulse width limited by Max. junction temperature.
Note 3: Pulse width ≤ 300us, duty cycle ≤ 2%.



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