SIRC04DP datasheet(1/9 Pages) VISHAY

部件名	SIRC04DP

功能描述	N-Channel 30 V (D-S) MOSFET With Schottky Diode

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制造商	VISHAY [Vishay Siliconix]

网页	http://www.vishay.com

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SiRC04DP

www.vishay.com

Vishay Siliconix

S21-0840-Rev. B, 09-Aug-2021

1

Document Number: 62954

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

N-Channel 30 V (D-S) MOSFET With Schottky Diode

FEATURES

• TrenchFET® Gen IV power MOSFET

•SkyFET® with monolithic Schottky diode

• 100 % Rg and UIS tested

• Material categorization: for definitions of

compliance please see www.vishay.com/doc?99912

APPLICATIONS

• Synchronous buck

• Synchronous rectification

•DC/DC conversion

Notes

a. Based on TC = 25 °C

b. Surface mounted on 1" x 1" FR4 board

c. t = 10 s

d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper

(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not

required to ensure adequate bottom side solder interconnection

e. Rework conditions: Manual soldering with a soldering iron is not recommended for leadless components

f. Maximum under steady state conditions is 70 °C/W

g. Package limit

PRODUCT SUMMARY

VDS (V)

30

RDS(on) max. (

Ω) at VGS = 10 V

0.00245

RDS(on) max. (

Ω) at VGS = 4.5 V

0.00350

Qg typ. (nC)

16.6

ID (A) a, g

60

SCHOTTKY

VF (V) at 5 A

0.7

IF (A) a, g

60

Configuration

Single plus integrated Schottky

PowerPAK® SO-8 Single

Top View

1

6.15

mm

5.15

mm

Bottom View

4

G

3

S

2

S

1

S

D

8

D

6

D

7

D

5

N-Channel MOSFET

G

S

D

Schottky

Diode

ORDERING INFORMATION

Package

PowerPAK SO-8 Single

Lead (Pb)-free and halogen-free

SiRC04DP-T1-GE3

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-source voltage

VDS

30

V

Gate-source voltage

VGS

+20, -16

Continuous drain current (TJ = 150 °C)

TC = 25 °C

ID

60 g

A

TC = 70 °C

60 g

TA = 25 °C

33.6 b, c

TA = 70 °C

26.9 b, c

Pulsed drain current (t = 300 μs)

IDM

100

Continuous source-drain diode current

TC = 25 °C

IS

60 g

TA = 25 °C

7.1 b ,c

Single pulse avalanche current

L = 0.3 mH

IAS

15

Single pulse avalanche energy

EAS

11.25

mJ

Maximum power dissipation

TC = 25 °C

PD

50

W

TC = 70 °C

32

TA = 25 °C

5 b, c

TA = 70 °C

3.2 b, c

Operating junction and storage temperature range

TJ, Tstg

-55 to +150

°C

Soldering recommendations (peak temperature) d, e

260

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

TYPICAL

MAXIMUM

UNIT

Maximum junction-to-ambient b,f

t

≤ 10 s

RthJA

20

25

°C/W

Maximum junction-to-case (drain)

Steady state

RthJC

1.9

2.5

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