SISC06DN datasheet(1/9 Pages) VISHAY

部件名	SISC06DN

功能描述	N-Channel 30 V (D-S) MOSFET

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制造商	VISHAY [Vishay Siliconix]

网页	http://www.vishay.com

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SiSC06DN

www.vishay.com

Vishay Siliconix

S21-0841-Rev. B, 09-Aug-2021

1

Document Number: 62944

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

N-Channel 30 V (D-S) MOSFET

FEATURES

• TrenchFET® Gen IV power MOSFET

•SkyFET® with monolithic Schottky diode

• 100 % Rg and UIS tested

• Material categorization:

for definitions of compliance please see

www.vishay.com/doc?99912

APPLICATIONS

• Personal computers and servers

• Synchronous buck

• Synchronous rectification

•DC/DC conversion

Notes

a. Surface mounted on 1" x 1" FR4 board

b. t = 10 s

c. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed

and is not required to ensure adequate bottom side solder interconnection

d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components

e. Maximum under steady state conditions is 81 °C/W

f. Based on TC = 25 °C

g. Package limited

PRODUCT SUMMARY

VDS (V)

30

RDS(on) max. (

Ω) at VGS = 10 V

0.0027

RDS(on) max. (

Ω) at VGS = 4.5 V

0.0040

Qg typ. (nC)

17.5

ID (A)

40 g

Configuration

Single

PowerPAK® 1212-8 Single

Top View

1

3.3

mm

3.3

mm

Bottom View

1

S

1

S

2

S

3

S

4

G

D

8

D

7

D

6

D

5

N-Channel MOSFET

G

S

D

Schottky

Diode

ORDERING INFORMATION

Package

PowerPAK 1212-8

Lead (Pb)-free and halogen-free

SiSC06DN-T1-GE3

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-source voltage

VDS

30

V

Gate-source voltage

VGS

+20, -16

Continuous drain current (TJ = 150 °C)

TC = 25 °C

ID

40 g

A

TC = 70 °C

40 g

TA = 25 °C

27.6 a, b

TA = 70 °C

25.2 a, b

Pulsed drain current (t = 100 μs)

IDM

100

Continuous source-drain diode current

TC = 25 °C

IS

40 g

TA = 25 °C

3.3 a, b

Single pulse avalanche current

L = 0.1 mH

IAS

15

Single pulse avalanche energy

EAS

11.25

mJ

Maximum power dissipation

TC = 25 °C

PD

46.3

W

TC = 70 °C

29.6

TA = 25 °C

3.7 a, b

TA = 70 °C

3.1 a, b

Operating junction and storage temperature range

TJ, Tstg

-55 to +150

°C

Soldering recommendations (peak temperature) c, d

260

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

TYPICAL

MAXIMUM

UNIT

Maximum junction-to-ambient a, e

t

≤ 10 s

RthJA

25

33

°C/W

Maximum junction-to-case (drain)

Steady state

RthJC

2.1

2.7

类似零件编号 - SISC06DN

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