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ADM7154ARDZ-1.2-R7 数据表(PDF) 19 Page - Analog Devices

部件名 ADM7154ARDZ-1.2-R7
功能描述  600 mA, Ultralow Noise, High PSRR, RF Linear Regulator
PDF  23 Pages
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制造商  AD [Analog Devices]
网页  http://www.analog.com
标志 AD - Analog Devices

ADM7154ARDZ-1.2-R7 数据表(HTML) 19 Page - Analog Devices

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Data Sheet
ADM7154
Rev. B | Page 19 of 23
The junction temperature of the ADM7154 is calculated from
the following equation:
TJ = TA + (PD × θJA)
(2)
where:
TA is the ambient temperature.
PD is the power dissipation in the die, given by
PD = ((VIN − VOUT) × ILOAD) + (VIN × IGND)
(3)
where:
VIN and VOUT are the input and output voltages, respectively.
ILOAD is the load current.
IGND is the ground current.
Power dissipation caused by ground current is quite small and
can be ignored. Therefore, the junction temperature equation
simplifies to the following:
TJ = TA + (((VIN − VOUT) × ILOAD) × θJA)
(4)
As shown in Equation 4, for a given ambient temperature, input
to output voltage differential, and continuous load current,
there exists a minimum copper size requirement for the PCB to
ensure that the junction temperature does not rise above 150°C.
The heat dissipation from the package can be improved by
increasing the amount of copper attached to the pins and
exposed pad of the ADM7154. Adding thermal planes
underneath the package also improves thermal performance.
However, as shown in Table 7, a point of diminishing returns is
eventually reached, beyond which an increase in the copper
area does not yield significant reduction in the junction to
ambient thermal resistance.
Figure 55 to Figure 60 show junction temperature calculations
for different ambient temperatures, power dissipation, and areas
of PCB copper.
TOTAL POWER DISSIPATION (W)
6400mm2
500mm2
25mm2
TJ MAX
25
35
45
55
65
75
85
95
105
115
125
135
145
155
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0
Figure 55. Junction Temperature vs. Total Power Dissipation for
the 8-Lead LFCSP, TA = 25°C
TOTAL POWER DISSIPATION (W)
1.8
2.0
2.2
2.4
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
50
60
70
80
90
100
110
120
140
160
130
150
6400mm2
500mm2
25mm2
TJ MAX
Figure 56. Junction Temperature vs. Total Power Dissipation for
the 8-Lead LFCSP, TA = 50°C
TOTAL POWER DISSIPATION (W)
1.5
0.8 0.9 1.0 1.1 1.2 1.3 1.4
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
65
75
85
95
105
115
125
135
155
145
6400mm2
500mm2
25mm2
TJ MAX
Figure 57. Junction Temperature vs. Total Power Dissipation for
the 8-Lead LFCSP, TA = 85°C
TOTAL POWER DISSIPATION (W)
1.5
0.8 0.9 1.0 1.1 1.2 1.3 1.4
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
65
75
85
95
105
115
125
135
155
145
6400mm2
500mm2
25mm2
TJ MAX
Figure 58. Junction Temperature vs. Total Power Dissipation for
the 8-Lead SOIC, TA = 25°C



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