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TLMD310 数据表(PDF) 3 Page - Vishay Siliconix |
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TLMD310 数据表(HTML) 3 Page - Vishay Siliconix |
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3 / 6 page ![]() Document Number 83037 Rev. 1.9, 12-Sep-07 www.vishay.com 3 Vishay Semiconductors TLMD310. TYPICAL CHARACTERISTICS Tamb = 25 °C, unless otherwise specified Figure 1. Power Dissipation vs. Ambient Temperature Figure 2. Forward Current vs. Ambient Temperature for InGaN Figure 3. Pulse Forward Current vs. Pulse Duration 100 80 60 40 0 25 50 75 100 125 Tamb - Ambient Temperature (°C) 95 10904 20 0 0 10 20 30 40 60 95 10905 50 T amb - Ambient Temperature (°C) 100 80 60 40 20 0 0.01 0.1 1 10 1 10 100 1000 10000 t p - Pulse Length (ms) 100 95 9985 DC t p /T = 0.005 0.5 0.2 0.1 0.01 0.05 0.02 T amb < 6 0 °C Figure 4. Rel. Luminous Intensity vs. Angular Displacement Figure 5. Figure 6. Rel. Luminous Intensity vs. Ambient Temperature 0.4 0.2 0 0.2 0.4 0.6 95 10319 0.6 0.9 0.8 0° 30° 10° 20° 40° 50° 60° 70° 80° 0.7 1.0 1 10 100 95 10014 1 1.5 2 2.5 3 V F - Forward Voltage (V) red 0 95 10015 20 40 60 80 100 T amb - Ambient Temperature (°C) 0 0.4 0.8 1.2 1.6 2.0 red |
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