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TSML1040 数据表(PDF) 2 Page - Vishay Siliconix

部件名 TSML1040
功能描述  High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW
PDF  9 Pages
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制造商  VISHAY [Vishay Siliconix]
网页  http://www.vishay.com
标志 VISHAY - Vishay Siliconix

TSML1040 数据表(HTML) 2 Page - Vishay Siliconix

  TSML1040 Datasheet HTML 1Page - Vishay Siliconix TSML1040 Datasheet HTML 2Page - Vishay Siliconix TSML1040 Datasheet HTML 3Page - Vishay Siliconix TSML1040 Datasheet HTML 4Page - Vishay Siliconix TSML1040 Datasheet HTML 5Page - Vishay Siliconix TSML1040 Datasheet HTML 6Page - Vishay Siliconix TSML1040 Datasheet HTML 7Page - Vishay Siliconix TSML1040 Datasheet HTML 8Page - Vishay Siliconix TSML1040 Datasheet HTML 9Page - Vishay Siliconix  
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TSML1000, TSML1020, TSML1030, TSML1040
www.vishay.com
Vishay Semiconductors
Rev. 2.1, 13-Mar-14
2
Document Number: 81033
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
Fig. 2 - Forward Current vs. Ambient Temperature
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
Reverse voltage
VR
5V
Forward current
IF
100
mA
Peak forward current
tp/T = 0.5, tp
= 100 μs
IFM
200
mA
Surge forward current
tp = 100 μs
IFSM
1.0
A
Power dissipation
PV
190
mW
Junction temperature
Tj
100
°C
Operating temperature range
Tamb
-40 to +85
°C
Storage temperature range
Tstg
-40 to +100
°C
Soldering temperature
t
≤ 5 s
Tsd
< 260
°C
Thermal resistance junction/ambient
Soldered on PCB, pad dimensions:
4 mm x 4 mm
RthJA
400
°C
0
20
40
60
80
100
120
140
160
180
200
Tamb - Ambient Temperature (°C)
16187
100
90
80
70
60
50
40
30
20
10
0
0
20
40
60
80
100
120
16188
0
T
amb - Ambient Temperature (°C)
90
80
70
60
50
40
30
20
10
100
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
Forward voltage
IF = 20 mA, tp = 20 ms
VF
1.2
1.5
V
IF = 1 A, tp = 100 μs
VF
2.2
V
Temperature coefficient of VF
IF = 1 mA
TKVF
-1.8
mV/K
Reverse current
VR = 5 V
IR
10
μA
Junction capacitance
VR = 0 V, f = 1 MHz, E = 0
Cj
40
pF
Radiant intensity
IF = 20 mA, tp = 20 ms
Ie
311
15
mW/sr
Radiant power
IF = 100 mA, tp = 20 ms
φe
40
mW
Temperature coefficient of
φe
IF = 20 mA
TK
φe
-0.6
%/K
Angle of half intensity
ϕ
± 12
deg
Peak wavelength
IF = 100 mA
λp
940
nm
Spectral bandwidth
IF = 100 mA
Δλ
30
nm
Temperature coefficient of
λp
IF = 100 mA
TK
λp
0.2
nm/K
Rise time
IF = 100 mA
tr
15
ns
Fall time
IF = 100 mA
tf
15
ns



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