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VRF2933 数据表(PDF) 2 Page - Microchip Technology

部件名 VRF2933
功能描述  50 V, 300 W, 150 MHz RF Power MOSFET
PDF  14 Pages
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制造商  MICROCHIP [Microchip Technology]
网页  http://www.microchip.com
标志 MICROCHIP - Microchip Technology

VRF2933 数据表(HTML) 2 Page - Microchip Technology

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1.
Device Specifications
This section shows the specifications of the VRF2933(MP) device.
1.1
Absolute Maximum Ratings
The following table shows the absolute maximum ratings of the VRF2933(MP) device. TC = 25 °C unless otherwise
specified.
Table 1-1. Absolute Maximum Ratings
Symbol
Parameter
Ratings
Unit
VDSS
Drain source voltage
170
V
ID
Continuous drain current
42
A
VGS
Gate-source voltage
±40
V
PD
Total power dissipation
648
W
TSTG
Storage temperature range
–65 to 150
°C
TJ
Operating junction temperature
200
1.2
Electrical Performance
The following table shows the static characteristics of the VRF2933(MP) device. TC = 25 °C unless otherwise
specified.
Table 1-2. Static Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
V(BR)DSS Drain-source breakdown voltage
VGS = 0 V, ID = 100 mA
170
180
V
VDS(ON)
On-state drain voltage
ID(ON) = 20 A, VGS = 10 V
2.1
2.4
IDSS
Zero gate voltage drain current
VDS = 100 V, VGS = 0 V
2.0
mA
IGSS
Gate-source leakage current
VDS = ±20 V, VDS = 0 V
2.0
µA
gfs
Forward transconductance
VDS = 10 V, ID = 20 A
8
mhos
VGS(th)
Gate-source threshold voltage
VDS = 10 V, ID = 100 mA
2.9
3.6
4.4
V
The following table shows the thermal characteristics of the VRF2933(MP) device.
Table 1-3. Thermal Characteristics
Symbol
Characteristic
Min
Typ
Max
Unit
RθJC
Junction-to-case thermal resistance
0.27
°C/W
Note:  These devices are sensitive to electrostatic discharge. Proper handling procedures should be followed.
The following table shows the dynamic characteristics of the VRF2933(MP) device. TC = 25 °C unless otherwise
specified.
VRF2933, VRF2933MP
Device Specifications
© 2022 Microchip Technology Inc.
and its subsidiaries
Datasheet
DS00004434A-page 2



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