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VRF2933MP 数据表(PDF) 1 Page - Microchip Technology |
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VRF2933MP 数据表(HTML) 1 Page - Microchip Technology |
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1 / 14 page ![]() VRF2933, VRF2933MP 50 V, 300 W, 150 MHz RF Power MOSFET Product Overview The VRF2933(MP) is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter- modulation distortion. Adding MP at the end of part number specifies a matched pair where VGS(TH) is matched between the two parts. Features • Improved ruggedness V(BR)DSS = 170 V • 300 W with 22 dB typical gain at 30 MHz, 50 V • Excellent stability and low IMD • Common source configuration • Available in matched pairs (VRF2933MP) • 70:1 load VSWR capability at specified operating conditions • Nitride passivated • Refractory gold metallization • High voltage replacement for SD2933 • Thermally enhanced package • RoHS compliant © 2022 Microchip Technology Inc. and its subsidiaries Datasheet DS00004434A-page 1 |
类似零件编号 - VRF2933MP |
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类似说明 - VRF2933MP |
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