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SIP32101 数据表(PDF) 2 Page - Vishay Siliconix |
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SIP32101 数据表(HTML) 2 Page - Vishay Siliconix |
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2 / 9 page ![]() SiP32101, SiP32102, SiP32103 www.vishay.com Vishay Siliconix S15-0598-Rev. G, 30-Mar-15 2 Document Number: 62617 For technical questions, contact: powerictechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Notes a. Negative current injection up to 300 mA. b. All bumps soldered to 1 inch x 1 inch, 2 oz. copper, 4 layers PC board. c. Derate 13.7 mW/°C above TA = 70 °C. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating/conditions for extended periods may affect device reliability. Notes a. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum. b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. c. For VIN outside this range consult typical EN, EN threshold curve. ABSOLUTE MAXIMUM RATINGS PARAMETER CONDITIONS LIMIT UNIT VPA, VPB Reference to GND -0.3 to +6 V Pulse at 1 ms reference to GND a -1.6 VEN Reference to GND -0.3 to +6 Maximum Continuous Switch Current 7 A Maximum Pulse Current 100 μs pulse 15 ESD (HBM) 8000 V Operating Temperature -40 to +85 °C Operating Junction Temperature 125 Storage Temperature -65 to +150 Thermal Resistance ( θJA) b 73 °C/W Power Dissipation (PD) b, c TA = 70 °C 1096 mW SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS UNLESS SPECIFIED LIMITS UNIT VIN = VPA/VPB = 2.3 V to 5.5 V, TA = -40 °C to 85 °C (Typical values are at VPA, VPB = 4.2 V, CPA, CPB = 0.1 μF, TA = 25 °C) MIN.a TYP.b MAX.a Power Supply Operating Voltage c VPA/PB 2.3 - 5.5 V Quiescent Current IQ VEN = 0 V (for SiP32101), VEN = VIN (for SiP32102), no load - 0.015 300 nA VEN = 0 V (for SiP32103), no load - 8.2 15 μA Shutdown Current ISHDN VEN = VIN (for SiP32101), VEN = 0 V (for SiP32102), no load - 0.010 300 nA Internal FET On-Resistance RDS(on) VPA/VPB = 2.3 V, IL = 500 mA, TA = 25 °C - 8 13 m Ω VPA/VPB = 3.3 V, IL = 500 mA, TA = 25 °C - 6.5 10 Control EN / EN Input Logic-Low Voltage c VIL -- 0.4 V EN / EN Input Logic-High Voltage c VIH 1.4 - - EN / EN Pull Resistor REN VPA/VPB = 5.5 V, VEN (or VEN) = 2.3 V - 500 700 k Ω Timing Output Turn-On Delay Time td(on) VIN = 4.2 V, RL = 100 Ω, CL = 0.1 μF, TA = 25 °C -0.5 - ms Output Turn-On Rise Time tr -1 - Output Turn-Off Delay Time td(off) -2.4 - Output Turn-Off Fall Time tf -1 - |
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