AS4LC4M4F1 datasheet(1/14 Pages) ALSC

部件名	AS4LC4M4F1

功能描述	4M횞4 CMOS DRAM (Fast Page) 3.3V Family

PDF	14 Pages

Scroll/Zoom	100%

制造商	ALSC [Alliance Semiconductor Corporation]

网页	https://www.alliancememory.com

标志

1 / 14 page

®

AS4LC4M4F1

4M×4 CMOS DRAM (Fast Page) 3.3V Family

5/16/01; v.1.0 Restored

Alliance Semiconductor

P. 1 of 14

May 2001

Features

• Organization: 4,194,304 words × 4 bits

• High speed

- 50/60 ns RAS access time

- 25/30 ns column address access time

- 12/15 ns CAS access time

• Low power consumption

- Active:

500 mW max

- Standby: 3.6 mW max, CMOS I/O

• Fast page mode

•Refresh

- 2048 refresh cycles, 32 ms refresh interval

-RAS-only or CAS-before-RAS refresh or self-refresh

• TTL-compatible, three-state I/O

• JEDEC standard package

- 300 mil, 24/26-pin SOJ

• 3.3V power supply

• Latch-up current

≥ 200 mA

• ESD protection

≥ 2000 volts

• Industrial and commercial temperature available

Pin arrangement

A8

A7

A6

A5

A4

A10

A0

A1

A2

A3

VCC

GND

I/O3

I/O2

CAS

OE

VCC

I/O0

I/O1

WE

RAS

1

2

3

4

5

26

25

24

23

22

NC

A9

621

8

9

10

11

18

17

16

15

14

12

SOJ

A8

A7

A6

A5

A4

A10

A0

A1

A2

A3

VCC

GND

I/O3

I/O2

CAS

OE

VCC

I/O0

I/O1

WE

RAS

1

2

3

4

5

NC

A9

6

TSOP*

13

19

*TSOP availability to be determined

8

9

10

11

12

13

18

17

16

15

14

19

26

25

24

23

22

21

Pin designation

Pin(s)

Description

A0 to A10

Address inputs

RAS

Row address strobe

CAS

Column address strobe

WE

Write enable

I/O0 to I/O3

Input/output

OE

Output enable

VCC

Power

GND

Ground

Selection guide

Symbol

AS4LC4M4F1-50

AS4LC4M4F1-60

Unit

Maximum RAS access time

tRAC

50

60

ns

Maximum column address access time

tCAA

25

30

ns

Maximum CAS access time

tCAC

12

15

ns

Maximum output enable (OE) access time

tOEA

13

15

ns

Minimum read or write cycle time

tRC

80

100

ns

Minimum fast page mode cycle time

tPC

25

30

ns

Maximum operating current

ICC1

120

110

mA

Maximum CMOS standby current

ICC5

1.0

mA

类似零件编号 - AS4LC4M4F1

制造商	部件名	数据表	功能描述
Austin Semiconductor	AS4LC4M4	2Mb / 19P	4M x 4 CMOS DRAM WITH FAST PAGE MODE, 3.3V
	AS4LC4M4883C	191Kb / 20P	4 MEG x 4 DRAM 3.3V, EDO PAGE MODE
	AS4LC4M4DG-6/IT	2Mb / 19P	4M x 4 CMOS DRAM WITH FAST PAGE MODE, 3.3V
	AS4LC4M4DG-6/XT	2Mb / 19P	4M x 4 CMOS DRAM WITH FAST PAGE MODE, 3.3V
	AS4LC4M4DG-7/IT	2Mb / 19P	4M x 4 CMOS DRAM WITH FAST PAGE MODE, 3.3V

More results

类似说明 - AS4LC4M4F1

制造商	部件名	数据表	功能描述
Samsung semiconductor	KM44C4003C	376Kb / 20P	4M x 4Bit CMOS Quad CAS DRAM with Fast Page Mode
Alliance Semiconductor ...	AS4C14400	398Kb / 16P	1M-bit 횞 4 CMOS DRAM (Fast page mode or EDO)
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Austin Semiconductor	MT4C4001J	251Kb / 20P	1 MEG x 4 DRAM Fast Page Mode DRAM
	AS4LC4M4	2Mb / 19P	4M x 4 CMOS DRAM WITH FAST PAGE MODE, 3.3V
	MT4C4001J	1Mb / 21P	1 MEG x 4 DRAM Fast Page Mode DRAM
Integrated Silicon Solu...	IS41C16105C	712Kb / 20P	16Mb DRAM WITH FAST PAGE MODE
	IS41C16257C	361Kb / 20P	4Mb DRAM WITH FAST PAGE MODE
	IS41C44052C	411Kb / 17P	16Mb DRAM WITH FAST PAGE MODE