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FAM65CR51AXZ2 数据表(PDF) 4 Page - ON Semiconductor |
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FAM65CR51AXZ2 数据表(HTML) 4 Page - ON Semiconductor |
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4 / 14 page  FAM65CR51AXZ1, FAM65CR51AXZ2 www.onsemi.com 4 Table 3. ELECTRICAL SPECIFICATIONS OF MOSFET (TJ = 25°C, Unless Otherwise Specified) Symbol Parameter Conditions Min Typ Max Unit BVDSS Drain−to−Source Breakdown Voltage ID = 1 mA, VGS = 0 V 650 − − V VGS(th) Gate−to−Source Threshold Voltage VGS = VDS, ID = 3.3 mA 3.0 − 5.0 V RDS(ON) Q1 Q1 Low Side MOSFET VGS = 10 V, ID = 20 A − 44 51 mW RDS(ON) Q2 Q2 Low Side MOSFET − 44 51 mW RDS(ON) Q1 Q1 Low Side MOSFET VGS = 10 V, ID = 20 A, TJ = 125°C (Note 3) − 79 − mW RDS(ON) Q2 Q2 Low Side MOSFET − 79 − mW gFS Forward Transconductance VDS = 20 V, ID = 20 A (Note 3) − 30 − S IGSS Gate−to−Source Leakage Current VGS = ±20 V, VDS = 0 V −100 − +100 nA IDSS Drain−to−Source Leakage Current VDS = 650 V, VGS = 0 V − − 10 mA DYNAMIC CHARACTERISTICS (Note 3) Ciss Input Capacitance VDS = 400 V VGS = 0 V f = 1 MHz − 4864 − pF Coss Output Capacitance − 109 − pF Crss Reverse Transfer Capacitance − 16 − pF Coss(eff) Effective Output Capacitance VDS = 0 to 520 V VGS = 0 V − 652 − pF Rg Gate Resistance f = 1 MHz − 2 − W Qg(tot) Total Gate Charge VDS = 380 V ID = 20 A VGS = 0 to 10 V − 123 − nC Qgs Gate−to−Source Gate Charge − 37.5 − nC Qgd Gate−to−Drain “Miller” Charge − 49 − nC SWITCHING CHARACTERISTICS (Note 3) ton Turn−on Time VDS = 400 V ID = 20 A VGS = 10 V RG = 4.7 Ohm − 87 − ns td(on) Turn−on Delay Time − 47 − ns tr Turn−on Rise Time − 43 − ns toff Turn−off Time − 146 − ns td(off) Turn−off Delay Time − 118 − ns tf Turn−off Fall Time − 29 − ns BODY DIODE CHARACTERISTICS VSD Source−to−Drain Diode Voltage ISD = 20 A, VGS = 0 V − 0.95 − V Trr Reverse Recovery Time VDS = 520 V, ID = 20 A, dI/dt = 100 A/ms (Note 3) − 133 − ns Qrr Reverse Recovery Charge − 669 − nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Defined by design, not subject to production test |
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