SiC530

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Vishay Siliconix

S20-0486-Rev. C, 29-Jun-2020

4

Document Number: 62940

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Notes

ELECTRICAL SPECIFICATIONS



PARAMETER

SYMBOL

TEST CONDITION

LIMITS

UNIT

MIN.

TYP.

MAX.

POWER SUPPLY

Control logic supply current

-

80

-

μA

-

120

-

-

300

-

Drive supply current

-

7

15

mA

-

20

-

PS4 mode supply current

-5

9

μA

BOOTSTRAP SUPPLY

Bootstrap diode forward voltage

-

-

0.65

V

PWM CONTROL INPUT

Rising threshold

3.6

3.9

4.2

V

Falling threshold

0.72

1

1.3

Tri-state voltage

-

2.5

-

Tri-state rising threshold

1.11.351.6

Tri-state falling threshold

3.4

3.7

4

Tri-state rising threshold hysteresis

-

325

-

mV

Tri-state falling threshold hysteresis

-

250

-

PWM input current

-

-

350

μA

-

-

-350

ZCD_EN# CONTROL INPUT

Rising threshold

3.3

3.6

3.9

V

Falling threshold

1.1

1.4

1.7

Tri-state voltage

-

2.5

-

Tri-state rising threshold

1.5

1.8

2.1

Tri-state falling threshold

2.93.153.4

Tri-state rising threshold hysteresis

-

375

-

mV

Tri-state falling threshold hysteresis

-

450

-

ZCD_EN# input current

-

-

100

μA

-

-

-100

PS4 exit latency

--

5

μs

TIMING SPECIFICATIONS

Tri-state to GH/GL rising

propagation delay

No load, see fig. 5

-20-

ns

Tri-state hold-off time

-

150

-

GH - turn off propagation delay

-20-

GH - turn on propagation delay

(dead time rising)

-20-

GL - turn off propagation delay

-20-

GL - turn on propagation delay

(dead time falling)

-20-

PWM minimum on-time

30

-

-

PROTECTION

Under voltage lockout

-

3.4

3.9

V

2.4

2.9

-

Under voltage lockout hysteresis

-

500

-

mV