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SP7545 数据表(PDF) 2 Page - Sipex Corporation |
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SP7545 数据表(HTML) 2 Page - Sipex Corporation |
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2 / 4 page ![]() Corporation SIGNAL PROCESSING EXCELLENCE 176 ABSOLUTE MAXIMUM RATINGS (T A = 25°C unless otherwise noted.) These are stress ratings only and functional operation of the device at these or any other above those indicated in the operation sections of the specifications below is not implied. Exposure to absolute maximum rating conditions for extended periods of time may affect reliability. V DD to GND .................................................................. –0.3V, +17V Digital Input Voltage to GND ................................. –0.3V, V DD+0.3V V REF or VRFB to GND ................................................................ ±25V Output Voltage (Pin 1, Pin 2) ................................ –0.3V, V DD+0.3V Power Dissipation (Any Package to +75 °C) ........................ 450mW Derates above 75 °C by ...................................................... 6mW/°C Dice Junction Temperature ................................................. +150 °C Storage Temperature ............................................ –65 °C to +150°C Lead Temperature (Soldering, 60 seconds) ........................ +300 °C SPECIFICATIONS (T A=25°C; VDD =+5V or +15V as noted; VREF = +10V; IO1 = AGND = GND = 0V; unipolar unless otherwise noted.) PARAMETER MIN. TYP. MAX. UNIT CONDITIONS STATIC PERFORMANCE Resolution 12 Bits Integral Non-Linearity Note 6 –J ±2.0 LSB Note 5; 11-bit relative accuracy –K ±1.0 LSB Note 5; 12-bit relative accuracy Differential Non-Linearity Note 7 –J ±4.0 LSB Note 5; monotonic to 12-bits –K ±1.0 LSB Note 5; monotonic to 12-bits Gain Error Note 16 –J ±20 LSB V DD = +5V; Note 5 ±25 LSB V DD = +15V –K ±10 LSB V DD = +5V ±15 LSB V DD = +15V Output Leakage Current ±10 nA At I O1 (Pin 1); Note 5 and 17 AC PERFORMANCE CHARACTERISTICS Output Amplifier HOS-050; Note 10 Propagation Delay 300 ns V DD = +5V; Note 11 250 ns V DD = +15V; Note 11 Current Settling Time 2.0 µs Full scale transition; Note 12 Output Capacitance 50 200 pF WR, CS = 0V; data inputs V DD 200 pF Note 5; data inputs V DD 25 70 pF Data inputs 0V 70 pF Note 5; data inputs 0V Glitch Energy 250 nV-s Note 13 Multiplying Feedthrough Error 2.0 mV P-P Measured at output I O1; Note 14 0.2 mV P-P Measured at output I O1; Note 15 STABILITY Gain Error TC ±1.0 ±2.0 ppm/ °C ±2.0 ppm/ °C Note 5 Integral Non-Linearity TC ±0.1 ±1.0 ppm/ °C ±1.0 ppm/ °C Note 5 Differential Non-Linearity TC ±0.1 ±1.0 ppm/ °C ±1.0 ppm/ °C Note 5 Power Supply Rejection ±0.002 ±0.01 %/% %/0.005% change in power supply voltage ±0.02 %/% Note 5 REFERENCE INPUT Input Resistance 7 10 15 K Ω Pin 19 to GND Input Resistance TC ±150 ppm/ °C Voltage Range ±25 Volts Note 5 and 8 |
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