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SAMWIN
SW830
REV0.1
04.10.1
Electrical Characteristics (Tc=25℃ unless otherwise noted)
Value
Symbol
Parameter
Test Conditions
Min
Typ
Max
Off Characteristics
BV
DSS
Drain- Source Breakdown Voltage
V
GS=0V,ID=250uA
500
-
-
V
△BV
DSS/△
Tj
Breakdown Voltage Temperature
coefficient
I
D=250uA,referenced to 25℃
-
0.6
-
V/℃
V
DS=500V, VGS=0V
I
DSS
Drain-Source Leakage Current
V
DS=400V, Tc=125℃
--
1
uA
Gate-Source Leakage Current
V
GS=30V,VDS=0V
-
-
100
nA
Gate-Source Leakage Reverse
V
GS=-30V, VDS=0V
-
-
-100
nA
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
DS=VGS,ID=250uA
2.0
-
4.0
V
R
DS(ON)
Static Drain-Source On-state
Resistance
V
GS=10V,ID=2.5A
-
-
1.4
ohm
Dynamic Characteristics
Ciss
Input Capacitance
-
-
1100
Coss
Output Capacitance
-
-
115
Crss
Reverse Transfer Capacitance
-
-
32
Dynamic Characteristics
t
d(on)
Turn-on Delay Time
-
-
40
t
r
Rise Time
-
-
50
t
d(off)
Turn-off Delay Time
-
-
170
t
f
Fall Time
-
-
50
Q
g
Total Gate Charge
-
28
37
Q
gs
Gate-Source Charge
-
4
-
Q
gd
Gate-Drain Charge (Miller Charge)
-
12
-
nc
V
DS=400V,VGS=10V, ID=5A
(Note4,5)
ns
V
DD=250V,ID=5A
R
G=50ohm
(Note4,5)
pF
V
GS=0V,VDS=25V, f=1MHz
I
GSS
Units
Source-Drain Diode Ratings and Characteristics
uc
-
1.5
-
Reverse Recovery Charge
Q
rr
ns
-
330
-
I
S=5A,VGS=0V
dI
F/dt=100A/us
Reverse Recovery Time
t
rr
V
1.5
-
-
I
S=5A,VGS=0V
Diode Forward Voltage
V
SD
20
-
-
Pulsed Source Current
I
SM
A
5
-
-
Integral Reverse
p-n Junction Diode
in the MOSFET
Continuous Source Current
I
S
Unit.
Max.
Typ.
Min.
Test Conditions
Parameter
Symbol
G
S
D
s
NOTES
1. Repeativity rating: pulse width limited by junction temperature
2. L=28.1mH,I
AS=5A,VDD=50V,RG=0ohm, Starting TJ=25℃
3. I
SD≤5A,di/dt≤100A/us,VDD≤BVDSS, Starting TJ=25℃
4. Pulse Test: Pulse Width≤300us,Duty Cycle≤2%
5. Essentially independent of operating temperature.
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