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SAMWIN
SW840
REV0.1
04.10.15
2/6
Electrical Characteristics (Tc=25 unless otherwise noted)
Value
Symbol
Parameter
Test Conditions
Min
Typ
Max
Off Characteristics
BV
DSS
Drain- Source Breakdown VoltageV
GS=0V,ID=250uA
500
-
-V
BV
DSS/
Tj
Breakdown Voltage Temperature
coefficient
I
D=250uA, referenced to 25
-
0.55
-
V/
V
DS=500V, VGS=0V
I
DSS
Drain-Source Leakage Current
V
DS=400V, Tc=125
-
-
1
uA
Gate-Source Leakage Current
V
GS=30V, VDS=0V
-
-
100
nA
Gate-Source Leakage Reverse
V
GS=-30V, VDS=0V
-
-
-100
nA
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
DS=VGS,ID=250uA
2.0
-
4.0V
R
DS(ON)
Static Drain-Source On-state
Resistance
V
GS=10V,ID=4.0A
-
0.7
0.85
ohm
Dynamic Characteristics
Ciss
Input Capacitance
-
-
1450
Coss
Output Capacitance
-
-
210
Crss
Reverse Transfer Capacitance
-
-
30
Dynamic Characteristics
t
d(on)
Turn-on Delay Time
-
-
60
t
r
Rise Time
-
-
80
t
d(off)
Turn-off Delay Time
-
-
320
t
f
Fall Time
-
-
100
Q
g
Total Gate Charge
-
-
36
Q
gs
Gate-Source Charge
-
7-
Q
gd
Gate-Drain Charge (Miller Charge)
-
12.5-
nc
V
DS=400V,VGS=10V, ID=8.5A
(Note4,5)
ns
V
DD=250V,ID=8.5A
R
G=50ohm
(Note4,5)
pF
V
GS=0V,VDS=25V, f=1MHz
I
GSS
Units
Source-Drain Diode Ratings and Characteristics
uc
-
2.2
-
Reverse Recovery Charge
Q
rr
ns
-
300
-
I
S=1.0A,VGS=0V,
dI
F/dt=100A/us
Reverse Recovery Time
t
rr
V
1.4
-
-
I
S=1.0A,VGS=0V
Diode Forward Voltage
V
SD
34
-
-
Pulsed Source Current
I
SM
A
8.5
-
-
Integral Reverse
p-n Junction Diode
in the MOSFET
Continuous Source Current
I
S
Unit.
Max.
Typ.
Min.
Test Conditions
Parameter
Symbol
NOTES
1. Repeativity rating: pulse width limited by junction temperature
2. L=10mH,I
AS=8.5A,VDD=50V,RG=0ohm, Starting TJ=25
3. ISD
1.8A,di/dt
100A/us,V
DD
BVDSS, Starting TJ=25
4. Pulse Test: Pulse Width
300us,Duty Cycle
2%
5. Essentially independent of operating temperature.
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