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DG2002 数据表(PDF) 4 Page - Vishay Siliconix |
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DG2002 数据表(HTML) 4 Page - Vishay Siliconix |
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4 / 10 page ![]() www.vishay.com 4 Document Number: 71448 S-72609-Rev. C, 24-Dec-07 Vishay Siliconix DG2002 Notes: a. Room = 25 °C, Full = as determined by the operating suffix. b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. c. Typical values are for design aid only, not guaranteed nor subject to production testing. d. Guarantee by design, nor subjected to production test. e. VIN = input voltage to perform proper function. f. Guaranteed by 5 V leakage testing, not production tested. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS V+ = 5.0 V Parameter Symbol Test Conditions Unless Otherwise Specified V+ = 5 V, ± 10 % VIN = 0.8 or 2.4 V e Tempa Limits - 40 to 85 °C Unit Minb Typc Maxb Analog Switch Analog Signal Ranged VNO, VNC, VCOM Full 0 V+ V On-Resistance rON V+ = 4.5 V, VCOM = 3 V, INO, INC = 10 mA Room Full 6.4 7.4 7.8 8.8 Ω rON Flatness d rON Flatness V+ = 4.5 V, VCOM = 0 to V+, INO, INC = 10 mA Room 3 Switch Off Leakage Current INO(off), INC(off) V+ = 5.5 V VNO, VNC = 1 V/4.5 V, VCOM = 4.5 V/1 V Room Full - 1.0 - 4.0 1.0 4.0 nA ICOM(off) Room Full - 1.0 - 4.0 1.0 4.0 Channel-On Leakage Current ICOM(on) V+ = 5.5 V, V+ = 5.5 V VNO, VNC = VCOM = 1 V/4.5 V Room Full - 1.0 - 4.0 1.0 4.0 Digital Control Input High Voltage VINH Full 2.4 V Input Low Voltage VINL Full 0.8 Input Capacitance Cin Full 3 pF Input Current IINL or IINH VIN = 0 or V+ Full - 1 1 µA Dynamic Characteristics Turn-On Timed tON VNO or VNC = 3 V, RL = 300 Ω, CL = 35 pF Figures 1 and 2 Room Full 815 16 ns Turn-Off Timed tOFF Room Full 613 14 Break-Before-Make Timed td Room 1 4 Charge Injectiond QINJ CL = 1 nF, VGEN = 0 V, RGEN = 0 Ω, Figure 3 Room 5 10 pC Off-Isolationd OIRR RL = 50 Ω, CL = 5 pF, f = 1 MHz Room - 69 dB Crosstalkd XTALK Room - 69 Source-Off Capacitanced CNO(off), CNC(off) VIN = 0 or V+, f = 1 MHz Room 5 pF Channel-On Capacitanced CON Room 29 Power Supply Power Supply Range V+ 4.5 5.5 V Power Supply Current I+ VIN = 0 or V+ 0.01 1.0 µA Power Consumption PC 5.5 µW |
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