2SCR542D datasheet(1/2 Pages) ISC

部件名	2SCR542D

功能描述	isc Silicon NPN Power Transistors

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制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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isc Silicon NPN Power Transistors

2SCR542D

DESCRIPTION

·

DC Current Gain hFE :200-500@ IC= 0.5A

·

Collector-Emitter Breakdown Voltage

: V(BR) CEO= 30V(Min)

·

Minimum Lot-to-Lot variations for robust device

performance and reliable operation

APPLICATIONS

·

Designed for use in general purpose amplifier and switching

applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

30

V

VCEO

Collector-Emitter Voltage

30

V

VEBO

Emitter-Base Voltage

6.0

V

IC

Collector Current-Continuous

5.0

A

ICM

Collector Current-Pulse

10

A

PC

Collector Power Dissipation

TC=25℃

10

W

Tj

Junction Temperature

150

℃

Tstg

Storage Ttemperature Range

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

12.5

℃

/W

类似零件编号 - 2SCR542D

制造商	部件名	数据表	功能描述
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