STTH812D datasheet(1/2 Pages) ISC

部件名	STTH812D

功能描述	Ultrafast Recovery Rectifier

PDF	2 Pages

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制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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1

Ultrafast Recovery Rectifier

STTH812D

FEATURES

·

Ultrafast Recovery Time

·

Low Forward Voltage

·

Low Leakage Current

·

150℃ Operating Junction Temperature

·

Minimum Lot-to-Lot variations for robust device

performance and reliable operation

APPLICATIONS

·

Switching power supplies

·

Power switching circuits

·

General purpose

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VRRM

VRWM

VR

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

1200

V

IF(AV)

Average Rectified Forward Current

(Rated VR)

8

A

IFRM

Peak Repetitive Forward Current

100

A

IFSM

Nonrepetitive Peak Surge Current

80

A

TJ

Junction Temperature

-65~150

℃

Tstg

Storage Temperature Range

-65~150

℃

类似零件编号 - STTH812D

制造商	部件名	数据表	功能描述
STMicroelectronics	STTH812D	192Kb / 11P	Ultrafast recovery - 1200 V diode 02-Mar-2006
Thinki Semiconductor Co...	STTH812D	644Kb / 3P	10 Ampere,1200 Volt SwitchMode Single Fast Recovery Epitaxial Diode
STMicroelectronics	STTH812DI	192Kb / 11P	Ultrafast recovery - 1200 V diode 02-Mar-2006

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