GSIB620N datasheet(2/4 Pages) VISHAY

2 / 4 page

GSIB620N, GSIB640N, GSIB660N, GSIB680N

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Vishay General Semiconductor

Revision: 09-Jul-2020

Document Number: 89385

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

(1) Unit case mounted on aluminum plate heatsink

(2) Units mounted on PCB with 0.5" x 0.5" (12 mm x 12 mm) copper pads and 0.375" (9.5 mm) lead length

(3) Recommended mounting position is to bolt down on heatsink with silicone thermal compound for maximum heat transfer with #6 screw

RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)

Fig. 1 - Derating Curve Output Rectified Current

Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current

Per Diode

Fig. 3 - Typical Forward Characteristics Per Diode

Fig. 4 - Typical Reverse Characteristics Per Diode

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

GSIB620N

GSIB640N

GSIB660N

GSIB680N

UNIT

Maximum thermal resistance

RJA (2)

°C/W

RJC (1)

3.4

ORDERING INFORMATION (Example)

PREFERRED P/N

UNIT WEIGHT (g)

PREFERRED PACKAGE CODE

BASE QUANTITY

DELIVERY MODE

GSIB660N-M3/45

7.0

Tube

100

150

Temperature (°C)

Heatsink Mounting, T

PCB Mounting, T

100

120

180

150

210

J = TJ Max.

Single Sine-Wave

Number of Cycles at 60 Hz

1.0 Cycle

0.3

1.1

0.01

0.1

100

0.5

0.7

0.9

Instantaneous Forward Voltage (V)

J = 150 °C

J = 125 °C

J = 25 °C

0.4

1.2

0.6

0.8

1.0

1000

100

0.01

0.1

100

J = 150 °C

J = 125 °C

J = 25 °C

Percent of Rated Peak Reverse Voltage (%)

GSIB620N 数据表(PDF) 2 Page - Vishay Siliconix

GSIB620N 数据表(HTML) 2 Page - Vishay Siliconix

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