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MB2M 数据表(PDF) 2 Page - Vishay Siliconix |
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MB2M 数据表(HTML) 2 Page - Vishay Siliconix |
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2 / 4 page ![]() MB2M, MB4M, MB6M www.vishay.com Vishay General Semiconductor Revision: 15-Jul-2020 2 Document Number: 88660 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Notes (1) On glass epoxy PCB mounted on 0.05" x 0.05" (1.3 mm x 1.3 mm) pads (2) On aluminum substrate PCB with an area of 0.8" x 0.8" (20 mm x 20 mm) mounted on 0.05" x 0.05" (1.3 mm x 1.3 mm) solder pad RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Fig. 1 - Derating Curve for Output Rectified Current Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Per Diode ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL MB2M MB4M MB6M UNIT Maximum instantaneous forward voltage per diode IF = 0.4 A VF 1.0 V Maximum DC reverse current at rated DC blocking voltage per diode TA = 25 °C IR 5.0 μA TA = 125 °C 100 Typical junction capacitance per diode 4.0 V, 1 MHz CJ 13 pF THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL MB2M MB4M MB6M UNIT Typical thermal resistance RθJA (1) 85 °C/W RθJA (2) 70 RθJL (1) 20 ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE MB2M-E3/45 0.22 45 100 Tube 0 20 40 60 80 100 120 140 160 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Aluminum Substrate Glass Epoxy PCB Resistive or Inductive Load Ambient Temperature (°C) 1 10 100 0 5 10 15 20 25 30 35 f = 60 Hz f = 50 Hz T A = 40 °C Single Half Sine-Wave Number of Cycles 1.0 Cycle |
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