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STR73XF 数据表(PDF) 32 Page - STMicroelectronics |
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STR73XF 数据表(HTML) 32 Page - STMicroelectronics |
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32 / 40 page ![]() Electrical characteristics STR73xF 32/40 3.10 Flash electrical characteristics VDD = 5V ± 10%, TA = -40 / +105°C, unless otherwise specified. 1. 0k cycle data applies to new parts, not yet cycled by the customer but after approx. 100 test cycles during manufacture. Table 14. Flash electrical characteristics Symbol Parameter Conditions Value Unit Typ Max TA = 25 °C TA = 105 °C 0k1 cycles 0k1 cycles 10k cycles tWP Word Program (32-bit) 35 80 120 µs tDWP Double Word Program (64- bit) 60 150 190 µs tBP64 Bank 0 Program (64K) (Double Word Program) 0.5 1.25 1.5 s tBP128 Bank 0 Program (128K) (Double Word Program) 12.5 3.1 s tBP256 Bank 0 Program (256K) (Double Word Program) 24.9 6.2 s tSE8 Sector Erase (8K) Not preprogrammed 0.6 0.9 1.3 s Preprogrammed (all bits programmed to 0) 0.5 0.8 1.1 tSE32 Sector Erase (32K) not preprogrammed 1.1 2.0 3.0 s Preprogrammed (all bits programmed to 0) 0.8 1.8 2.3 tSE64 Sector Erase (64K) Not preprogrammed 1.7 3.7 5.3 s Preprogrammed (all bits programmed to 0) 1.3 3.3 3.8 tRPD Recovery from Power- Down 20 20 µs tPSL Program Suspend Latency 10 10 µs tESL Erase Suspend Latency 30 30 µs tESRR Erase Suspend Request Rate Min delay between 2 requests 20 20 20 ms tSP Set Protection 40 170 170 µs |
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