Bipolar High fT Low Voltage NPN Silicon Transistors

V4.00

Specification Subject to Change Without Notice

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MP4T3243 Series

Maximum Ratings

Parameter

Symbol

Unit

MP4T324300

Chip

MP4T324333

SOT-23

MP4T324335

Micro-X

Collector-Base Voltage

1

Volts

8

8

8

Collector-Emitter Voltage

1

Volts

6

6

6

Emitter-Base Voltage

1

Volts

1.5

1.5

1.5

Collector Current

1

mA

110

110

110

Junction Temperature

°C

200

125

200

Storage Temperature

°C

-65 to +175

°C

-65 to +125

°C

-65 to +175

°C

Power Dissipation

1,3

mW

600

250

400

Operating Temperature

2

°C

150

125

150

1.

At 25

°C case temperature (packaged transistors) or 25°C mounting surface temperature (chip transistors).

2.

Case or bonding surface temperature. Derate maximum power dissipation rating linearly to zero watts at maximum operating temperature.

3.

The thermal resistance of the MP4T324300 junction/case is 50

°C/watt nominal.

Electrical Specifications @ +25

°C

Parameter

Condition

Symbol

Units

MP4T324300

Chip

MP4T324333

SOT-23

MP4T324335

Micro-X

Gain Bandwidth Product

GHz

6 typ

6 typ

6 typ

Insertion Power Gain

2

dB

f = 1 GHz

7 min

6 min

7 min

f = 2 GHz

3 typ

2.5 typ

3 typ

Noise Figure

NF

dB

f = 1 GHz

2.2 max

2.4 max

2.2 max

Unilateral Gain

GTU (max)

dB

f = 1 GHz

10 typ

9 typ

10 typ

f = 2 GHz

6 typ

4 typ

6 typ

Maximum Available Gain

MAG

dB

f = 2 GHz

8.5 typ

7 typ

8.5 typ

Power Out at 1 dB

dBm

Compression

f = 2 GHz

20 typ

19 typ

20 typ

f = 3 GHz

15 typ

15 typ

15 typ