VS-90EPS..L-M3, VS-90APS..L-M3

www.vishay.com

Vishay Semiconductors

Revision: 10-Jul-2018

1

Document Number: 93396

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

High Voltage, Input Rectifier Diode, 90 A

FEATURES

• Very low forward voltage drop

• 150 °C max. operating junction temperature

• Glass passivated pallet chip junction

• Designed

and

qualified

according

to

• Material categorization: for definitions of compliance

APPLICATIONS

• Input rectification for single and three phase bridge

configurations

• Off-board EV/HEV battery chargers

• Renewable energy inverters

• Input rectification for single and three phase bridge

configurations

• Vishay Semiconductors switches and output rectifiers

which are available in identical package outlines

DESCRIPTION

High voltage rectifiers optimized for very low forward

voltage drop with moderate leakage.

These devices are intended for use in main rectification

(single or three phase bridge).

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PRIMARY CHARACTERISTICS

90 A

800 V to 1200 V

1.20 V

1100 A

150 °C

Package

TO-247AD 2L, TO-247AD 3L

Circuit configuration

Single

TO-247AD 2L

TO-247AD 3L

1

3

2

1

3

2

VS-90APS..L

VS-90EPS..L

2

1

3

Cathode

Anode

Base

cathode

2

Anode

1

Anode

3

Base

cathode

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL

CHARACTERISTICS

VALUES

UNITS

Sinusoidal waveform

90

A

Range

800 to 1200

V

1100

A

1.20

V

-40 to +150

°C

VOLTAGE RATINGS

PART NUMBER

PEAK REVERSE VOLTAGE

V

PEAK REVERSE VOLTAGE

V

AT 150 °C

mA

VS-90EPS08L-M3, VS-90APS08L-M3

800

900

1.5

VS-90EPS12L-M3, VS-90APS12L-M3

1200

1300