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VS-90APS..L-M3 数据表(PDF) 2 Page - Vishay Siliconix |
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VS-90APS..L-M3 数据表(HTML) 2 Page - Vishay Siliconix |
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2 / 8 page ![]() VS-90EPS..L-M3, VS-90APS..L-M3 www.vishay.com Vishay Semiconductors Revision: 10-Jul-2018 2 Document Number: 93396 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current IF(AV) TC = 112 °C, 180° conduction half sine wave 90 A Maximum peak one cycle non-repetitive surge current IFSM 10 ms sine pulse, rated VRRM applied 915 10 ms sine pulse, no voltage reapplied 1100 Maximum I2t for fusing I2t 10 ms sine pulse, rated VRRM applied 4185 A2s 10 ms sine pulse, no voltage reapplied 6050 Maximum I2 t for fusing I2 t t = 0.1 ms to 10 ms, no voltage reapplied 60 500 A2 s ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum forward voltage drop VFM 90 A, TJ = 25 °C 1.20 V Forward slope resistance rt TJ = 150 °C 3.17 m Threshold voltage VF(TO) 0.73 V Maximum reverse leakage current IRM TJ = 25 °C VR = Rated VRRM 0.1 mA TJ = 150 °C 1.5 THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage temperature range TJ, TStg -40 to +150 °C Maximum thermal resistance, junction to case RthJC DC operation 0.2 °C/W Maximum thermal resistance, junction to ambient RthJA 40 Typical thermal resistance, case to heatsink RthCS Mounting surface, flat, smooth and greased 0.25 Approximate weight 6g 0.21 oz. Mounting torque minimum 6 (5) kgf · cm (lbf · in) maximum 12 (10) Marking device Case style TO-247AD 2L 90EPS08L, 90EPS12L Case style TO-247AD 3L 90APS08L, 90APS12L |
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