Silicon Bipolar High fT Low Noise Microwave Transistors

MP42001 Series

Specification Subject to Change Without Notice

M-Pulse Microwave____________________________________________________________________________________

2

576 Charcot Avemue, San Jose, California 95131

Tel (408) 432-1480

Fax (408)) 432-3440

Absolute Maximum Ratings

MP42001 Series

Collector-Base Voltage

20 V

Collector-Emitter Voltage

15 V

Emitter-Base Voltage

1.5 V

Collector Current

125 mA

Junction Operating Temperature

200

°C

Storage Temperature

Chip or Ceramic Packages

-65

°C to +200°C

Plastic Packages

-65

°C to +125°C

Total Power Dissipation at 25

°C

509 Case Style

450 mW

510 Case Style

1.2 W

35 Case Style

750 mW

Electrical Specifications @ 25

°C

MP42001 Series

Parameter of Test

Condition

Symbol

Units

MP4200100

Chip

MP4200135

Micro-X

MP42001-509

TO-72

Gain Bandwidth Product

GHz

2.3 typ

1.5 typ

1.5 typ

Insertion Power Gain

2

dB

f = 100 MHz

30 typ

29 typ

26 typ

f = 450 MHz

16 typ

14 min

12 min

Noise Figure

NF

dB

f = 60 MHz

1.2 typ

1.4 typ

1.5 typ

f = 450 GHz

1.7 typ

1.9 typ

2.3 typ

Unilateral Gain

GTU (max)

dB

f = 60 MHz

30 typ

28 typ

28 typ

Power Out at 1 dB

dBm

Compression

Z=50 Ohms

f = 60 MHz

N/A

+5 typ

+7 typ

f = 450 MHz

N/A

+2 typ

+4 typ