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ART150FE 数据表(PDF) 3 Page - Ampleon Netherlands B.V. |
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ART150FE 数据表(HTML) 3 Page - Ampleon Netherlands B.V. |
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3 / 17 page ![]() ART150FE All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2021. All rights reserved. Product data sheet Rev. 1 — 4 January 2021 3 of 17 ART150FE Power LDMOS transistor 5. Thermal characteristics [1] Rth(j-c) is measured under RF conditions. [2] See Figure 1. Table 5. Thermal characteristics Symbol Parameter Conditions Typ Unit Rth(j-c) thermal resistance from junction to case Tcase =90 C; PL =150 W [1] 0.72 K/W Zth(j-c) transient thermal impedance from junction to case Tcase =90 C; tp = 100 s; =10 % 0.21 K/W (1) = 1 % (2) = 2 % (3) = 5 % (4) = 10 % (5) = 20 % (6) = 50 % (7) = 100 % (DC) Fig 1. Transient thermal impedance from junction to case as a function of pulse duration amp01579 10-7 10-6 10-5 10-4 10-3 10-2 10-1 1 10 102 0 0.2 0.4 0.6 0.8 1 tp (s) Zth(j-c) th(j-c) Zth(j-c) (K/W) (K/W) (K/W) (7) (7) (7) (6) (6) (6) (5) (5) (5) (4) (4) (4) (3) (3) (3) (2) (2) (2) (1) (1) (1) |
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