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ART2K0FE 数据表(PDF) 9 Page - Ampleon Netherlands B.V. |
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ART2K0FE 数据表(HTML) 9 Page - Ampleon Netherlands B.V. |
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9 / 18 page ![]() ART2K0FE_2K0FES_2K0FEG All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2022. All rights reserved. Product data sheet Rev. 4 — 22 March 2022 9 of 18 ART2K0FE(S)(G) Power LDMOS transistor VDS = 65 V; f = 108 MHz; tp = 100 s; =10 %. (1) IDq = 50 mA per section (2) IDq = 100 mA per section (3) IDq = 200 mA per section (4) IDq = 400 mA per section (5) IDq = 600 mA per section VDS = 65 V; f = 108 MHz; tp = 100 s; =10%. (1) IDq = 50 mA per section (2) IDq = 100 mA per section (3) IDq = 200 mA per section (4) IDq = 400 mA per section (5) IDq = 600 mA per section Fig 7. Power gain as a function of output power; typical values Fig 8. Drain efficiency as a function of output power; typical values amp01198 0 400 800 1200 1600 2000 2400 24 26 28 30 32 PL (W) Gp Gp (dB) (dB) (dB) (5) (5) (5) (4) (4) (4) (3) (3) (3) (2) (2) (2) (1) (1) (1) amp01199 0 400 800 1200 1600 2000 2400 0 20 40 60 80 PL (W) ηD ηD (%) (%) (%) (1) (1) (1) (2) (2) (2) (3) (3) (3) (4) (4) (4) (5) (5) (5) |
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