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ART1K6FHSU 数据表(PDF) 10 Page - Ampleon Netherlands B.V. |
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ART1K6FHSU 数据表(HTML) 10 Page - Ampleon Netherlands B.V. |
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10 / 18 page ![]() ART1K6FH_1K6FHS_1K6FHG All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2022. All rights reserved. Product data sheet Rev. 2 — 22 March 2022 10 of 18 ART1K6FH(S)(G) Power LDMOS transistor IDq = 100 mA per section; f = 108 MHz; tp = 100 s; =10%. (1) VDS = 55 V (2) VDS = 50 V (3) VDS = 45 V (4) VDS = 40 V (5) VDS = 35 V (6) VDS = 30 V IDq = 100 mA per section; f = 108 MHz; tp = 100 s; =10 %. (1) VDS = 55 V (2) VDS = 50 V (3) VDS = 45 V (4) VDS = 40 V (5) VDS = 35 V (6) VDS = 30 V Fig 9. Power gain as a function of output power; typical values Fig 10. Drain efficiency as a function of output power; typical values amp01462 0 400 800 1200 1600 2000 22 24.5 27 29.5 32 PL (W) Gp Gp (dB) (dB) (dB) (1) (1) (1) (2) (2) (2) (3) (3) (3) (4) (4) (4) (5) (5) (5) (6) (6) (6) amp01463 0 400 800 1200 1600 2000 0 20 40 60 80 100 PL (W) ηD ηD (%) (%) (%) (1) (1) (1) (2) (2) (2) (3) (3) (3) (4) (4) (4) (5) (5) (5) (6) (6) (6) |
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