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ART35FE 数据表(PDF) 1 Page - Ampleon Netherlands B.V. |
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ART35FE 数据表(HTML) 1 Page - Ampleon Netherlands B.V. |
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1 / 19 page ![]() 1. Product profile 1.1 General description Based on Advanced Rugged Technology (ART) a 35 W LDMOS transistor for ISM application has been designed. This unmatched device covers a frequency range of 1MHz to 650MHz. [1] tp =100 s; =10%. [2] Production circuit. [3] Center band performance numbers across the indicated frequency range. 1.2 Features and benefits High breakdown voltage enables class E operation up to VDS =48V Qualified up to a maximum of VDS =65V Characterized from 30 V to 65 V to support a wide range of applications Easy power control Integrated dual sided ESD protection enables class C operation and complete switch off of the transistor Excellent ruggedness with no device degradation High efficiency Excellent thermal stability Designed for broadband operation For RoHS compliance see the product details on the Ampleon website ART35FE Power LDMOS transistor Rev. 1 — 7 December 2020 Product data sheet Table 1. Application information Test signal f VDS PL Gp D (MHz) (V) (W) (dB) (%) CW pulsed [1][2] 108 65 35 30.4 71.2 CW [3] 10 to 54 65 35 28.7 75.3 CW [3] 60 to 130 65 35 24.6 65.8 CW [3] 81 to 108 65 35 30.1 72.7 |
类似零件编号 - ART35FE |
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类似说明 - ART35FE |
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