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BLF574 数据表(PDF) 2 Page - Ampleon Netherlands B.V. |
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BLF574 数据表(HTML) 2 Page - Ampleon Netherlands B.V. |
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2 / 19 page ![]() BLF574 All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2016. All rights reserved. Product data sheet Rev. 4 — 1 December 2016 2 of 19 BLF574 HF / VHF power LDMOS transistor 2. Pinning information [1] Connected to flange. 3. Ordering information 4. Limiting values 5. Thermal characteristics [1] Rth(j-c) is measured under RF conditions. Table 2. Pinning Pin Description Simplified outline Graphic symbol 1drain1 2drain2 3gate1 4gate2 5source [1] 5 12 4 3 4 3 5 1 2 sym117 Table 3. Ordering information Type number Package Name Description Version BLF574 - flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leads SOT539A Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage - 110 V VGS gate-source voltage 0.5 +11 V ID drain current - 56 A Tstg storage temperature 65 +150 C Tj junction temperature - 225 C Table 5. Thermal characteristics Symbol Parameter Conditions Typ Unit Rth(j-c) thermal resistance from junction to case Tcase =80 C; PL =400 W 0.23 K/W |
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