BAS16D datasheet(2/5 Pages) VISHAY

2 / 5 page

BAS16D

www.vishay.com

Vishay Semiconductors

Rev. 1.5, 23-Feb-18

Document Number: 85723

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

Fig. 1 - Forward Characteristics

Fig. 2 - Dynamic Forward Resistance vs. Forward Current

Fig. 3 - Admissible Power Dissipation vs.

Ambient Temperature

Fig. 4 - Relative Capacitance vs. Reverse Voltage

ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

MIN.

TYP.

MAX.

UNIT

Forward voltage

IF = 150 mA

1.25

IF = 50 mA

IF = 10 mA

0.855

IF = 1 mA

0.715

Leakage current

VR = 75 V

1000

VR = 25 V, Tj = 150 °C

μA

VR = 75 V, Tj = 150 °C

μA

Diode capacitance

VR = 0; f = 1 MHz

2pF

Reverse recovery time

IF = 10 mA, IR = 10 mA,

iR = 1 mA, RL = 100 

trr

6ns

18105

VF (V)

j = 100 °C

j = 25 °C

10- 2

10- 1

102

103

17438

f = 1 kHz

j = 25 °C

IF (mA)

-2

-1

110

18186

500

400

300

200

100

200 °C

amb

tot

100

17440

VR (V)

0.7

0.8

0.9

1.0

1.1

f = 1 MHz

j = 25 °C

410

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