K4M51163PC - R(B)E/G/C/F

February 2006

Mobile SDRAM

DC CHARACTERISTICS

°C ~ 85°C for Extended, -25°C ~ 70°C for Commercial)

NOTES:

1. Measured with outputs open.

2. Refresh period is 64ms.

3. It has +/-5

°C tolerance.

4. K4M51163PC-R(B)E/C**

5. K4M51163PC-R(B)G/F**

6. DPD(Deep Power Down) function is an optional feature, and it will be enabled upon request.

Please contact Samsung for more information.

7. Unless otherwise noted, input swing IeveI is CMOS(VIH /VIL=VDDQ/VSSQ).

Parameter

Symbol

Test Condition

Version

Unit

Note

-75

-90

-1L

Operating Current

(One Bank Active)

Burst length = 1

90

90

90

mA

1

Precharge Standby Current in

power-down mode

CKE

0.3

mA

CKE & CLK

0.3

Precharge Standby Current

in non power-down mode

CKE

Input signals are changed one time during 20ns

10

mA

CKE

Input signals are stable

1

Active Standby Current

in power-down mode

CKE

6

mA

CKE & CLK

3

Active Standby Current

in non power-down mode

(One Bank Active)

CKE

Input signals are changed one time during 20ns

25

mA

CKE

Input signals are stable

15

mA

Operating Current

(Burst Mode)

Page burst

4Banks Activated

95

80

80

mA

1

Refresh Current

150

150

150

mA

2

Self Refresh Current

CKE

≤ 0.2V

TCSR

85/70

°C

-E/C

Full Array

300

600

uA

4

1/2 of Full

270

500

1/4 of Full

255

450

-G/F

Full Array

250

500

5

1/2 of Full

220

400

1/4 of Full

205

350

Deep Power Down Current

CKE

≤ 0.2V

10

uA

6